Invention Grant
- Patent Title: Method for separating epitaxial layers from growth substrates, and semiconductor device using same
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Application No.: US15040969Application Date: 2016-02-10
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Publication No.: US09882085B2Publication Date: 2018-01-30
- Inventor: Jeong Hun Heo , Joo Won Choi , Choong Min Lee , Su Jin Shin , Ki Bum Nam , Yu Dae Han , A Ram Cha Lee
- Applicant: Seoul Viosys Co., Ltd.
- Applicant Address: KR Ansan-si
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: Perkins Coie LLP
- Priority: KR10-2012-0027561 20120319; KR10-2012-0034341 20120403; KR10-2012-0077658 20120717
- Main IPC: H01L33/24
- IPC: H01L33/24 ; H01L33/22 ; H01L33/00 ; H01L33/20 ; H01L21/02 ; H01L29/06 ; H01L33/02
Abstract:
The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.
Public/Granted literature
- US20160172539A1 METHOD FOR SEPARATING EPITAXIAL LAYERS FROM GROWTH SUBSTRATES, AND SEMICONDUCTOR DEVICE USING SAME Public/Granted day:2016-06-16
Information query
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