Invention Grant
- Patent Title: Apparatus and methods for high linearity voltage variable attenuators
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Application No.: US15050875Application Date: 2016-02-23
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Publication No.: US09882549B2Publication Date: 2018-01-30
- Inventor: Ahmed Mohammad Ashry Othman
- Applicant: ANALOG DEVICES GLOBAL
- Applicant Address: BM Hamilton
- Assignee: Analog Devices Global
- Current Assignee: Analog Devices Global
- Current Assignee Address: BM Hamilton
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: H03H11/24
- IPC: H03H11/24

Abstract:
Provided herein are apparatus and methods for high linearity voltage variable attenuators (VVAs). In certain configurations, a high linearity VVA includes multiple shunt arms or circuits that operate in parallel with one another between a signal node and a first DC voltage, such as ground. Thus, the shunt arms are in shunt with respect to a signal path of the VVA. The multiple shunt arms include a first shunt arm of one or more n-type field effect transistor (NFETs) and a second shunt arm of one or more p-type field effect transistor (PFETs). The gates of the NFETs are controlled using a control voltage, and the gates of the PFETs are controlled using a complementary control voltage that changes inversely with respect to the control voltage.
Public/Granted literature
- US20170244388A1 APPARATUS AND METHODS FOR HIGH LINEARITY VOLTAGE VARIABLE ATTENUATORS Public/Granted day:2017-08-24
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