The present disclosure relates to a semiconductor body etching apparatus having a multi-zone end point detection system. In some embodiments, the multi-zone end point detection system has a processing chamber that houses a workpiece that is etched according to an etching process. A plurality of end point detector (EPD) probes are located within the processing chamber. Respective EPD probes are located within different zones in the processing chamber, thereby enabling the detection of end point signals from multiple zones within the processing chamber. The detected end point signals are provided from the plurality of EPD probes to an advanced process control (APC) unit. The APC unit is configured to make a tuning knob adjustment to etching process parameters based upon the detected end point signals and to thereby account for etching non-uniformities.