- 专利标题: Fan-out semiconductor package structure and fabricating method
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申请号: US15437444申请日: 2017-02-21
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公开(公告)号: US09887148B1公开(公告)日: 2018-02-06
- 发明人: Jen-I Huang , Ching-Yang Chen
- 申请人: POWERTECH TECHNOLOGY INC.
- 申请人地址: TW Hsinchu County
- 专利权人: POWERTECH TECHNOLOGY INC.
- 当前专利权人: POWERTECH TECHNOLOGY INC.
- 当前专利权人地址: TW Hsinchu County
- 代理商 Winston Hsu
- 主分类号: H01L23/04
- IPC分类号: H01L23/04 ; H01L23/485 ; H01L23/31 ; H01L21/56
摘要:
A fan-out semiconductor package includes a layer of adhesive covering a temporary carrier, a first redistribution layer disposed on the layer of adhesive, the first redistribution layer including a first metal layer having recessed areas. Metal pillars are plated to a first group of the recessed areas in the first metal layer. A semiconductor chip next is bonded to a second group of the recessed areas and a molding compound covers the semiconductor chip. The molding compound is then ground to expose tops of the metal pillars. A second redistribution layer including a second passivation layer adhering to the molding compound and a second metal layer covering openings exposing the tops of the metal pillars are then added.
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