Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15174568Application Date: 2016-06-06
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Publication No.: US09887151B2Publication Date: 2018-02-06
- Inventor: Yukihiro Sato , Akira Muto , Ryo Kanda , Takamitsu Kanazawa
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2015-152409 20150731
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/495 ; H01L23/31 ; H01L29/739 ; H01L27/06 ; H01L25/075 ; H02P27/06

Abstract:
To improve the reliability of a semiconductor device. A chip mounting portion TAB5 is arranged to be shifted to the +x direction side. Further, a gate electrode pad of a semiconductor chip CHP1 (LV) and a pad of a semiconductor chip CHP3 are electrically coupled by a wire W1a and a wire W1b through a relay lead RL1. Likewise, a gate electrode pad of a semiconductor chip CHP1 (LW) and the pad of the semiconductor chip CHP3 are electrically coupled by a wire W1c and a wire W1d through a relay lead RL2. At this time, the structures of parts of the relay leads RL1 and RL2, which are exposed from a sealing body MR are different from the structures of respective parts exposed from the sealing body MR, of a plurality of leads LD1 and LD2 which function as external terminals.
Public/Granted literature
- US20170033035A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-02-02
Information query
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