Invention Grant
- Patent Title: Pixel with spacer layer covering photodiode
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Application No.: US15228071Application Date: 2016-08-04
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Publication No.: US09887225B2Publication Date: 2018-02-06
- Inventor: Kuo-Hung Lee , Chia-Pin Cheng , Fu-Cheng Chang , Volume Chien , Ching-Hung Kao
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L27/146

Abstract:
A semiconductor device is provided. The semiconductor device includes a semiconductor substrate. An isolation feature is disposed in the semiconductor substrate to define a pixel region and a periphery region of the semiconductor substrate. A transistor gate is formed on the semiconductor substrate in the pixel region, in which the transistor gate has a first sidewall and a second sidewall opposite to the first sidewall. A photodiode is disposed in the semiconductor substrate and adjacent to the second sidewall of the transistor gate. A patterned spacer layer is formed on the photodiode and on the transistor gate. The patterned spacer layer includes a first sidewall spacer on the first sidewall of the transistor gate, and a protective structure covering the photodiode and a top surface of the transistor gate.
Public/Granted literature
- US20170345852A1 PIXEL WITH SPACER LAYER COVERING PHOTODIODE Public/Granted day:2017-11-30
Information query
IPC分类: