Embodiments relate to methods and apparatus for batch processing of substrates during epitaxial film formation. In one example, a process chamber includes a chamber lid and substrate support. The chamber lid includes a centrally disposed gas inlet and a first gas deflector coupled to the chamber lid and adapted to direct the first process gas laterally across surfaces of a plurality of substrates. The lid also includes one or more gas outlets disposed radially outward of the centrally disposed gas inlet, and a plurality of lamps disposed between the centrally disposed gas inlet and the one or more gas outlets. The substrate support is rotatable and includes both a gas passage formed therein for introducing a second process gas to the internal volume of the process chamber and a second gas deflector adapted to direct the second process gas laterally across the surfaces of the plurality of substrates.