Invention Grant
- Patent Title: Methods for forming a patterned structure in a sensor
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Application No.: US14839572Application Date: 2015-08-28
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Publication No.: US09891770B2Publication Date: 2018-02-13
- Inventor: Po-Jui Chen , Soyoung Kim , Kuo-Hua Sung , Hui Chen , Rui Qiao
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Brownstein Hyatt Farber Schreck, LLP
- Main IPC: G06F3/00
- IPC: G06F3/00 ; G06F3/044
Abstract:
A sensor includes a patterned compliant layer positioned between two substrates. Each substrate can include one or more conductive electrodes, with each electrode of one substrate paired with a respective electrode of the other substrate. Each pair of conductive electrodes forms a capacitor. Several methods are disclosed that can be used to produce the patterned compliant layer.
Public/Granted literature
- US20170060292A1 Methods for Forming a Patterned Structure in a Sensor Public/Granted day:2017-03-02
Information query
