• 专利标题: Metal only post-mask ECO for integrated circuit
  • 申请号: US15378046
    申请日: 2016-12-14
  • 公开(公告)号: US09892966B1
    公开(公告)日: 2018-02-13
  • 发明人: Sven Trester
  • 申请人: NXP B.V.
  • 申请人地址: US CA San Jose
  • 专利权人: NXP B.V.
  • 当前专利权人: NXP B.V.
  • 当前专利权人地址: US CA San Jose
  • 代理商 Charles E. Bergere
  • 主分类号: G06F17/50
  • IPC分类号: G06F17/50 H01L21/768 H01L23/522 H01L23/528
Metal only post-mask ECO for integrated circuit
摘要:
A method of designing a layout of a metallization stack of an integrated circuit (IC), where the stack includes metal layers having patterned metal features. The method includes determining a layout of a first grid of the metallization stack, including patterned metal features for supplying power and providing signal connections to components of the IC. The method also includes determining a layout of a second grid of the stack for securing the IC against electromagnetic attacks. The second grid includes patterned metal features interspersed with the patterned metal features of the first grid in at least some of the metal layers of the metallization stack. The patterned metal features of the second grid are electrically connected to the first grid. The method further includes determining at least one layout change for the metallization stack in accordance with an engineering change order.
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