- 专利标题： Semiconductor device and fabrication method therefor
-
申请号： US15178903申请日： 2016-06-10
-
公开(公告)号： US09893070B2公开(公告)日： 2018-02-13
- 发明人: Chin-Shan Wang , Shun-Yi Lee
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Hauptman Ham, LLP
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L27/108
摘要：
A method of fabricating a semiconductor device. The method includes forming a dummy structure over a substrate, forming conductive features on opposite sides of the dummy gate structure, removing the dummy structure and a portion of the substrate beneath the dummy gate structure to form a trench, and filling the trench with a dielectric material.
公开/授权文献
- US20170358584A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR 公开/授权日：2017-12-14
信息查询
IPC分类:
