Invention Grant
- Patent Title: LTPS array substrate and method for producing the same
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Application No.: US14760750Application Date: 2015-06-17
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Publication No.: US09893096B2Publication Date: 2018-02-13
- Inventor: Cong Wang , Peng Du
- Applicant: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. , WUHAN CHINA STAR OPTOELECTRONICE TECHNOLOGY CO., LTD
- Applicant Address: CN Shenzhen, Guangdong CN Wuhan, Hubei
- Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd,Wuhan China Star Optoelectronics Technology Co., Ltd
- Current Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd,Wuhan China Star Optoelectronics Technology Co., Ltd
- Current Assignee Address: CN Shenzhen, Guangdong CN Wuhan, Hubei
- Agent Andrew C. Cheng
- Priority: CN201510310588 20150608
- International Application: PCT/CN2015/081634 WO 20150617
- International Announcement: WO2016/197399 WO 20161215
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/66 ; H01L29/786

Abstract:
An LTPS array substrate and a method for producing the same are proposed. The method includes: forming an insulating layer, a semiconductor layer, and a first positive photoresist layer on the substrate one by one; exposing one side of the substrate on the opposite side of the gate for forming a polycrystalline silicon layer; forming a source and a drain of the TFT on the polycrystalline silicon layer; forming a pixel electrode on the insulating layer and part of the source; forming a plain passivation layer on a source-drain electrode layer; forming a transparent electrode layer on the plain passivation layer so that the transparent electrode layer is connected to the gate, the source, and the drain via the contact hole. The use of masks in types and in numbers in the LTPS technology will be reduced. So, both of the processes and the production costs are reduced.
Public/Granted literature
- US20170141138A1 LTPS ARRAY SUBSTRATE AND METHOD FOR PRODUCING THE SAME Public/Granted day:2017-05-18
Information query
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