- 专利标题: 3D capacitor and method of manufacturing same
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申请号: US13289038申请日: 2011-11-04
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公开(公告)号: US09893163B2公开(公告)日: 2018-02-13
- 发明人: Chi-Wen Liu , Chao-Hsiung Wang
- 申请人: Chi-Wen Liu , Chao-Hsiung Wang
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Haynes and Boone, LLP
- 主分类号: H01L29/94
- IPC分类号: H01L29/94 ; H01L29/66 ; H01L49/02
摘要:
A 3D capacitor and method for fabricating a 3D capacitor is disclosed. An exemplary 3D capacitor includes a substrate including a fin structure, the fin structure including a plurality of fins. The 3D capacitor further includes an insulation material disposed on the substrate and between each of the plurality of fins. The 3D capacitor further includes a dielectric layer disposed on each of the plurality of fins. The 3D capacitor further includes a first electrode disposed on a first portion of the fin structure. The first electrode being in direct contact with a surface of the fin structure. The 3D capacitor further includes a second electrode disposed on a second portion of the fin structure. The second electrode being disposed directly on the dielectric layer and the first and second portions of the fin structure being different.
公开/授权文献
- US20130113072A1 3D Capacitor and Method of Manufacturing Same 公开/授权日:2013-05-09
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