Invention Grant
- Patent Title: Memory device having a translation layer with multiple associative sectors
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Application No.: US15093682Application Date: 2016-04-07
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Publication No.: US09898200B2Publication Date: 2018-02-20
- Inventor: Zhengyu Yang , Sina Hassani , Manu Awasthi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd
- Current Assignee: Samsung Electronics Co., Ltd
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F3/06 ; G06F12/02

Abstract:
A method for providing a memory translation layer includes: receiving write request streams from a host computer; selectively storing each write request stream into a sequential zone, a K-associative zone, and a random zone of log blocks of a nonvolatile memory based on the characteristics. A first group of the write request streams that are sequential and start from a header page of a log block are stored in the sequential zone. A second group of the write request streams that are sequential but do not start from a header page of a log block are stored in the K-associative zone. A third group of the write request streams that are random are stored in the random zone.
Public/Granted literature
- US20170242583A1 MEMORY DEVICE HAVING A TRANSLATION LAYER WITH MULTIPLE ASSOCIATIVE SECTORS Public/Granted day:2017-08-24
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