A nonvolatile memory control device performs data reading/writing control on partitions of a rewritable nonvolatile semiconductor memory. The device includes an erase cycle counting unit, a read cycle counting unit, a data reading/writing unit and a control unit. The erase cycle counting unit counts the number of erase cycles in total per partition. The read cycle counting unit counts the number of read cycles that same data is read per partition. When the number of erase cycles of a first partition is equal to or larger than a predetermined number of erase cycles, and a second partition having a smaller number of erase cycles and a larger number of read cycles than the first partition is present, the control unit controls the data reading/writing unit to exchange data in the first partition and data in the second partition.