Invention Grant
- Patent Title: Artificial microstructure and artificial electromagnetic material using the same
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Application No.: US13577553Application Date: 2011-10-27
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Publication No.: US09899742B2Publication Date: 2018-02-20
- Inventor: Ruopeng Liu , Guanxiong Xu , Jinjin Wang , Lin Luan , Zhiya Zhao , Chaofeng Kou , Fanglong He
- Applicant: Ruopeng Liu , Guanxiong Xu , Jinjin Wang , Lin Luan , Zhiya Zhao , Chaofeng Kou , Fanglong He
- Applicant Address: CN Shenzhen CN Shenzhen
- Assignee: KUANG-CHI INNOVATIVE TECHNOLOGY LTD.,KUANG-CHI INSTITUTE OF ADVANCED TECHNOLOGY
- Current Assignee: KUANG-CHI INNOVATIVE TECHNOLOGY LTD.,KUANG-CHI INSTITUTE OF ADVANCED TECHNOLOGY
- Current Assignee Address: CN Shenzhen CN Shenzhen
- Agency: Leason Ellis LLP
- Priority: CN201110061804 20110315; CN201110070889 20110323; CN201110120003 20110510; CN201110131817 20110520
- International Application: PCT/CN2011/081367 WO 20111027
- International Announcement: WO2012/122803 WO 20120920
- Main IPC: H01Q15/02
- IPC: H01Q15/02 ; H01Q15/24 ; H01Q15/00
Abstract:
An artificial microstructure used in artificial electromagnetic material includes a first line segment and a second line segment. The second line segment is perpendicular to the first line segment. The first line segment and the second line segment intersect with each other to form a cross-type structure. The present disclosure further relates to an artificial electromagnetic material using the artificial microstructure.
Public/Granted literature
- US20140011002A1 ARTIFICIAL MICROSTRUCTURE AND ARTIFICIAL ELECTROMAGNETIC MATERIAL USING THE SAME Public/Granted day:2014-01-09
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