- Patent Title: Ion implantation apparatus and scanning waveform preparation method
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Application No.: US15457698Application Date: 2017-03-13
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Publication No.: US09905397B2Publication Date: 2018-02-27
- Inventor: Shiro Ninomiya , Akihiro Ochi
- Applicant: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
- Current Assignee: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Michael Best & Friedrich LLP
- Priority: JP2016-055824 20160318
- Main IPC: H01J37/00
- IPC: H01J37/00 ; H01J37/317 ; H01J37/08 ; H01J37/147 ; H01J37/244

Abstract:
An ion implantation apparatus includes a beam scanner that provides reciprocating beam scanning in a beam scanning direction, a beam measurer that measures a beam current intensity distribution in the beam scanning direction at a downstream of the beam scanner, and a controller. The controller includes a scanning waveform preparing unit that determines whether or not a measured beam current intensity distribution measured by the beam measurer with use of a given scanning waveform fits a target non-uniform dose amount distribution, and that, in a case of fitting, correlates the given scanning waveform with the target non-uniform dose amount distribution.
Public/Granted literature
- US20170271128A1 ION IMPLANTATION APPARATUS AND SCANNING WAVEFORM PREPARATION METHOD Public/Granted day:2017-09-21
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