Invention Grant
- Patent Title: Bidirectional MOS device and method for preparing the same
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Application No.: US15372352Application Date: 2016-12-07
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Publication No.: US09905682B2Publication Date: 2018-02-27
- Inventor: Jinping Zhang , Zehong Li , Jingxiu Liu , Min Ren , Bo Zhang , Zhaoji Li
- Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA , INSTITUTE OF ELECTRONIC AND INFORMATION ENGINEERING IN DONGGUAN, UESTC
- Applicant Address: CN Chengdu CN Dongguan
- Assignee: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA,INSTITUTE OF ELECTRONIC AND INFORMATION ENGINEERING IN DONGGUAN, UESTC
- Current Assignee: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA,INSTITUTE OF ELECTRONIC AND INFORMATION ENGINEERING IN DONGGUAN, UESTC
- Current Assignee Address: CN Chengdu CN Dongguan
- Agency: Matthias Scholl P.C.
- Agent Matthias Scholl
- Main IPC: H01L29/74
- IPC: H01L29/74 ; H01L29/78 ; H01L21/02 ; H01L21/265 ; H01L21/3065 ; H01L29/10 ; H01L29/40 ; H01L29/66 ; H01L29/747
Abstract:
A bidirectional Metal-Oxide-Semiconductor (MOS) device, including a P-type substrate, and an active region. The active region includes a drift region, a first MOS structure and a second MOS structure; the first MOS structure includes a first P-type body region, a first P+ contact region, a first N+ source region, a first metal electrode, and a first gate structure; the second MOS structure includes a second P-type body region, a second P+ contact region, a second N+ source region, a second metal electrode, and a second gate structure; and the drift region includes a dielectric slot, a first N-type layer, a second N-type layer, and an N-type region. The active region is disposed on the upper surface of the P-type substrate. The first MOS structure and the second MOS structure are symmetrically disposed on two ends of the upper layer of the drift region.
Public/Granted literature
- US20170084728A1 BIDIRECTIONAL MOS DEVICE AND METHOD FOR PREPARING THE SAME Public/Granted day:2017-03-23
Information query
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