- 专利标题: Vertical ballast technology for power HBT device
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申请号: US13405481申请日: 2012-02-27
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公开(公告)号: US09911836B2公开(公告)日: 2018-03-06
- 发明人: Julio Costa , Michael Carroll
- 申请人: Julio Costa , Michael Carroll
- 申请人地址: US NC Greensboro
- 专利权人: Qorvo US, Inc.
- 当前专利权人: Qorvo US, Inc.
- 当前专利权人地址: US NC Greensboro
- 代理机构: Withrow & Terranova, P.L.L.C.
- 主分类号: H01L29/732
- IPC分类号: H01L29/732 ; H01L29/737 ; H01L23/66 ; H01L29/06
摘要:
Power amplification devices are disclosed having a vertical ballast configuration to prevent thermal runaway in at least one stack of bipolar transistors formed on a semiconductor substrate. To provide a negative feedback to prevent thermal runaway in the bipolar transistors, a conductive layer is formed over and coupled to the stack. A resistivity of the conductive layer provides an effective resistance that prevents thermal runaway in the bipolar transistors. The vertical placement of the conductive layer allows for vertical heat dissipation and thus provides ballasting without concentrating heat.
公开/授权文献
- US20120218047A1 VERTICAL BALLAST TECHNOLOGY FOR POWER HBT DEVICE 公开/授权日:2012-08-30