- 专利标题： Self aligned trench MOSFET with integrated diode
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申请号： US14635988申请日： 2015-03-02
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公开(公告)号： US09911840B2公开(公告)日： 2018-03-06
- 发明人: Sik Lui , Anup Bhalla
- 申请人： Alpha and Omega Semiconductor Incorporated
- 申请人地址： US CA Sunnyvale
- 专利权人： ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED
- 当前专利权人： ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： JDI Patent
- 代理商 Joshua D. Isenberg
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; H01L21/768 ; H01L27/108 ; H01L29/66 ; H01L29/08 ; H01L29/40 ; H01L29/423 ; H01L29/78 ; H01L29/872 ; H01L27/06 ; H01L29/861 ; H01L29/10 ; H01L29/417 ; H01L29/45 ; H01L29/47
摘要：
A transistor device includes a doped semiconductor substrate having one or more electrically insulated gate electrodes formed in trenches in the substrate. One or more body regions are formed in a top portion of the substrate proximate each gate trench. One or more source regions are formed in a self-aligned fashion in a top portion of the body regions proximate each gate trench. One or more thick insulator portions are formed over the gate electrodes on a top surface of the substrate with spaces between adjacent thick insulator portions. A metal is formed on top of the substrate over the thick insulator portions. The metal forms a self-aligned contact to the substrate through the spaces between the thick insulator portions. An integrated diode is formed under the self-aligned contact.
公开/授权文献
- US20150171201A1 SELF ALIGNED TRENCH MOSFET WITH INTEGRATED DIODE 公开/授权日：2015-06-18
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