Method and system for overcurrent protection for insulated-gate bipolar transistor (IGBT) modules
Abstract:
Circuits and methods for driving a load are disclosed. An exemplary driving circuit may include first and second switching devices electrically connected with each other in parallel. The driving circuit may also include a current sensing circuit configured to generate a current sensing signal indicating a value of a current flowing through the first switching device. The current sensing signal may include an offset caused by parasitic inductance imbalance in electrical connections connecting the first and second switching devices. The driving circuit may further include a driver circuit configured to control switching operations of the first and second switching devices. The driver circuit may include an overcurrent protection circuit electrically connected to the current sensing circuit. In addition, the driving circuit may include a current sensing signal correction circuit configured to reduce the offset in the current sensing signal received by the overcurrent protection circuit during a switching transient period.
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