- 专利标题： Method and apparatus with channel stop doped devices
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申请号： US13693906申请日： 2012-12-04
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公开(公告)号： US09917018B2公开(公告)日： 2018-03-13
- 发明人: Victor Moroz
- 申请人： Victor Moroz
- 申请人地址： US CA Mountain View
- 专利权人： Synopsys, Inc.
- 当前专利权人： Synopsys, Inc.
- 当前专利权人地址： US CA Mountain View
- 代理机构： Haynes Beffel & Wolfeld LLP
- 代理商 Yiding Wu
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8238 ; H01L21/762 ; G06F17/50
摘要：
Methods and apparatuses relate to implanting a surface of a semiconductor substrate with dopants, making undoped semiconductor material directly on the surface implanted with the dopants, and making a transistor with a transistor channel in the undoped semiconductor material, such that the transistor channel of the transistor remains undoped throughout manufacture of the integrated circuit.
公开/授权文献
- US20140154855A1 METHOD AND APPARATUS WITH CHANNEL STOP DOPED DEVICES 公开/授权日：2014-06-05
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