Invention Grant
- Patent Title: Light-emitting element, light-emitting device, lighting device, and electronic device
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Application No.: US14811525Application Date: 2015-07-28
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Publication No.: US09917259B2Publication Date: 2018-03-13
- Inventor: Hiromi Nowatari , Satoshi Seo
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2009-206431 20090907
- Main IPC: H01L51/00
- IPC: H01L51/00 ; H01L51/52 ; H01L51/50 ; H01L27/32

Abstract:
A light-emitting element is provided, in which n (n is a natural number of two or more) EL layers are provided between an anode and a cathode. Between the m-th (m is a natural number, 1≦m≦n−1) EL layer and the (m+1)-th EL layer, a first layer containing any of an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth metal compound, and a rare earth metal compound, a second layer containing a substance having high electron-transport properties in contact with the first layer, and a charge-generation layer containing a substance having high hole-transport properties and an acceptor substance in contact with the second layer are provided in this order over the anode. The charge-generation layer does not have a peak of an absorption spectrum in a visible light region.
Public/Granted literature
- US20150333270A1 Light-Emitting Element, Light-Emitting Device, Lighting Device, and Electronic Device Public/Granted day:2015-11-19
Information query
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