- 专利标题： Method of manufacturing semiconductor device, using hydrocarbon and halogen-based precursors, substrate processing apparatus for processing same, and recording medium comprising hydrocarbon and halogen-based precursors
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申请号： US14671504申请日： 2015-03-27
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公开(公告)号： US09922821B2公开(公告)日： 2018-03-20
- 发明人: Tsuyoshi Takeda
- 申请人： Hitachi Kokusai Electric Inc.
- 申请人地址： JP Tokyo
- 专利权人： HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人： HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人地址： JP Tokyo
- 代理机构： Volpe and Koenig, P.C.
- 优先权： JP2014-085652 20140417
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/36 ; H01L21/02 ; H01L21/285 ; C23C16/44 ; C23C16/52 ; C23C16/455 ; C23C16/24 ; C23C16/42 ; H01L21/3205
摘要：
Provided is a technique of forming a film containing a first element and a second element on a substrate by performing a cycle a predetermined number of times. The cycle includes: (a) supplying a hydro-based precursor containing the first element and a halogen-based precursor containing the second element into a process chamber accommodating a substrate to confine the hydro-based precursor and the halogen-based precursor in the process chamber; (b) maintaining a state where the hydro-based precursor and the halogen-based precursor are confined in the process chamber; and (c) exhausting the process chamber.
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