- 专利标题: Method of verifying layout of vertical memory device
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申请号: US15253320申请日: 2016-08-31
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公开(公告)号: US09929172B2公开(公告)日: 2018-03-27
- 发明人: Ki-Won Kim , Sung-Hoon Kim , Jae-Ick Son
- 申请人: Ki-Won Kim , Sung-Hoon Kim , Jae-Ick Son
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Volentine & Whitt, PLLC
- 优先权: KR10-2016-0020706 20160222
- 主分类号: H01L27/115
- IPC分类号: H01L27/115 ; H01L27/11582 ; G11C16/04 ; G11C16/06 ; H01L27/02 ; H01L27/11565 ; H01L27/1157
摘要:
A method of verifying a layout of a vertical memory device includes classifying a plurality of channel holes included in the layout of the vertical memory device into a plurality of types based on at least one of a distance between each channel hole and an isolation region adjacent thereto, shapes of the plurality of channel holes in the layout, and coordinates of the plurality of channel holes in the layout. Types of channel holes connected to each of a plurality of bit lines included in the layout are identified, and a determination is made whether loads of the plurality of bit lines are equalized, based on the identified types of the channel holes for each bit line.
公开/授权文献
- US20170243882A1 METHOD OF VERIFYING LAYOUT OF VERTICAL MEMORY DEVICE 公开/授权日:2017-08-24
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