Invention Grant
- Patent Title: Semiconductor device having a cap layer with V-shape
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Application No.: US15144842Application Date: 2016-05-03
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Publication No.: US09929234B2Publication Date: 2018-03-27
- Inventor: Chih-Kai Hsu , Ssu-I Fu , Yu-Hsiang Hung , Wei-Chi Cheng , Jyh-Shyang Jenq , Tsung-Mu Yang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201610209916 20160406
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/06 ; H01L29/78 ; H01L29/66 ; H01L23/535 ; H01L21/768
Abstract:
A method for fabricating semiconductor device is disclosed. First, a substrate is provided, and a gate structure is formed on the substrate. Next, a recess is formed adjacent to two sides of the gate structure, and an epitaxial layer is formed in the recess, in which a top surface of the epitaxial layer is lower than a top surface of the substrate. Next, a cap layer is formed on the epitaxial layer, in which a top surface of the cap layer is higher than a top surface of the substrate.
Public/Granted literature
- US20170294508A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2017-10-12
Information query
IPC分类:
