- 专利标题: Method and structure for protecting gates during epitaxial growth
-
申请号: US14309096申请日: 2014-06-19
-
公开(公告)号: US09941388B2公开(公告)日: 2018-04-10
- 发明人: Xiuyu Cai , Ying Hao Hsieh
- 申请人: GLOBALFOUNDRIES Inc.
- 申请人地址: KY Grand Cayman
- 专利权人: GLOBALFOUNDRIES INC.
- 当前专利权人: GLOBALFOUNDRIES INC.
- 当前专利权人地址: KY Grand Cayman
- 代理机构: Williams Morgan, P.C.
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L29/66 ; H01L29/78 ; H01L27/092 ; H01L21/8238 ; H01L29/165
摘要:
Embodiments of the present invention provide methods and structures for protecting gates during epitaxial growth. An inner spacer of a first material is deposited adjacent a transistor gate. An outer spacer of a different material is deposited adjacent the inner spacer. Stressor cavities are formed adjacent the transistor gate. The inner spacer is recessed, forming a divot. The divot is filled with a material to protect the transistor gate. The stressor cavities are then filled. As the gate is safely protected, unwanted epitaxial growth (“mouse ears”) on the transistor gate is prevented.
公开/授权文献
信息查询
IPC分类: