Invention Grant
- Patent Title: Semiconductor device and method for manufacturing a semiconductor device
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Application No.: US13627215Application Date: 2012-09-26
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Publication No.: US09941403B2Publication Date: 2018-04-10
- Inventor: Till Schloesser , Markus Zundel
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/40 ; H01L29/423 ; H01L27/088 ; H01L29/06 ; H01L21/8234
Abstract:
A semiconductor device includes a transistor including a source region, a drain region, and a gate electrode. The gate electrode is disposed in a first trench arranged in a top surface of the semiconductor substrate. The device further includes a control electrode. The control electrode is disposed in a second trench arranged in the top surface of the semiconductor substrate. The second trench has a second shape that is different from a first shape of the first trench.
Public/Granted literature
- US20140084362A1 Semiconductor Device and Method for Manufacturing a Semiconductor Device Public/Granted day:2014-03-27
Information query
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