Invention Grant
- Patent Title: Method for forming nanowires including multiple integrated devices with alternate channel materials
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Application No.: US15792281Application Date: 2017-10-24
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Publication No.: US09953882B2Publication Date: 2018-04-24
- Inventor: Ajey P. Jacob
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8238 ; H01L29/06 ; H01L29/786 ; H01L29/423 ; H01L27/092

Abstract:
Methods for forming a NW with multiple devices having alternate channel materials and resulting devices are disclosed. Embodiments include forming a first stack of semiconductor layers including a first doped Si layer, a first channel layer, and a second doped Si layer, respectively, on a Si substrate; forming a second stack including a first doped SiGe layer, a second channel layer, and a second doped SiGe layer, respectively, on the first stack; forming a vertical nanowire structure by directional etching, along a three-dimensional plane, the second and first stacks, respectively, down to an upper surface of the Si substrate; forming lower S/D regions and a lower gate-stack surrounding the first stack; forming upper S/D regions and an upper gate-stack surrounding the second stack; and forming contacts to the lower S/D regions, a first gate electrode, an upper S/D region, an upper gate electrode, and the second doped SiGe layer.
Public/Granted literature
- US20180090387A1 METHOD FOR FORMING NANOWIRES INCLUDING MULTIPLE INTEGRATED DEVICES WITH ALTERNATE CHANNEL MATERIALS Public/Granted day:2018-03-29
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