Invention Grant
- Patent Title: Method for film formation, and pattern-forming method
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Application No.: US15134508Application Date: 2016-04-21
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Publication No.: US09958781B2Publication Date: 2018-05-01
- Inventor: Yuushi Matsumura , Goji Wakamatsu , Naoya Nosaka , Tsubasa Abe , Yoshio Takimoto
- Applicant: JSR CORPORATION
- Applicant Address: JP Tokyo
- Assignee: JSR CORPORATION
- Current Assignee: JSR CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2015-089791 20150424
- Main IPC: G03F7/11
- IPC: G03F7/11 ; C09D161/14 ; C08G8/30 ; C08G8/22 ; G03F7/09 ; H01L21/027 ; G03F7/004

Abstract:
A method comprises applying a composition on a substrate to form a coating film on the substrate. The coating film is heated in an atmosphere in which an oxygen concentration is less than 1% by volume and a temperature is higher than 450° C. and 800° C. or lower, to form a film on the substrate. The composition comprises a compound comprising an aromatic ring. The oxygen concentration in the atmosphere during the heating of the coating film is preferably no greater than 0.1% by volume. The temperature in the atmosphere during the heating of the coating film is preferably 500° C. or higher and 600° C. or lower.
Public/Granted literature
- US20160314984A1 METHOD FOR FILM FORMATION, AND PATTERN-FORMING METHOD Public/Granted day:2016-10-27
Information query
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