Invention Grant
- Patent Title: Method to fabricate a high performance capacitor in a back end of line (BEOL)
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Application No.: US15625035Application Date: 2017-06-16
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Publication No.: US09960113B2Publication Date: 2018-05-01
- Inventor: Sunil Kumar Singh , Shesh Mani Pandey
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent Nathan Brian Davis
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/532 ; H01L49/02
Abstract:
A method can include applying a patterned mask over a semiconductor structure, the semiconductor structure having a dielectric layer, forming using the patterned mask a material formation trench intermediate first and second spaced apart metal formations formed in the dielectric layer, and disposing a dielectric material formation in the material formation trench.
Public/Granted literature
- US20170294378A1 METHOD TO FABRICATE A HIGH PERFORMANCE CAPACITOR IN A BACK END OF LINE (BEOL) Public/Granted day:2017-10-12
Information query
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