Invention Grant
- Patent Title: Capacitor strap connection structure and fabrication method
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Application No.: US14582655Application Date: 2014-12-24
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Publication No.: US09960168B2Publication Date: 2018-05-01
- Inventor: Veeraraghavan S. Basker , Kangguo Cheng , Benjamin Ryan Cipriany , Ramachandra Divakaruni , Brian J. Greene , Ali Khakifirooz , Byeong Yeol Kim , William Larsen Nicoll
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L27/108 ; H01L21/324 ; H01L21/84 ; H01L29/94 ; H01L27/12 ; H01L21/02 ; H01L21/285 ; H01L21/768
Abstract:
Structures and methods for deep trench capacitor connections are disclosed. The structure includes a reduced diameter top portion of the capacitor conductor. This increases the effective spacing between neighboring deep trench capacitors. Silicide or additional polysilicon are then deposited to complete the connection between the deep trench capacitor and a neighboring transistor.
Public/Granted literature
- US20160190140A1 CAPACITOR STRAP CONNECTION STRUCTURE AND FABRICATION METHOD Public/Granted day:2016-06-30
Information query
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