Invention Grant
- Patent Title: Semiconductor wafer protective film and method of manufacturing semiconductor device
-
Application No.: US14894879Application Date: 2014-05-22
-
Publication No.: US09966297B2Publication Date: 2018-05-08
- Inventor: Akimitsu Morimoto , Makoto Kataoka , Hideki Fukumoto
- Applicant: MITSUI CHEMICALS TOHCELLO, INC.
- Applicant Address: JP Chiyoda-Ku, Tokyo
- Assignee: MITSUI CHEMICALS TOHCELLO, INC.
- Current Assignee: MITSUI CHEMICALS TOHCELLO, INC.
- Current Assignee Address: JP Chiyoda-Ku, Tokyo
- Agency: Buchanan, Ingersoll & Rooney PC
- Priority: JP2013-113448 20130529
- International Application: PCT/JP2014/063577 WO 20140522
- International Announcement: WO2014/192630 WO 20141204
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/683 ; B32B27/30 ; C09J7/02 ; B32B27/06 ; C08F222/10 ; C09J133/10 ; B32B27/08 ; H01L21/02 ; H01L21/78

Abstract:
According to the present invention, there is provided a semiconductor wafer protective film including a substrate layer (A) and an adhesive layer (C) formed on the substrate layer (A), in which the substrate layer (A) includes polymer, and a solubility parameter of the polymer determined by a Van Krevelen method is equal to or greater than 9.
Public/Granted literature
- US20160133500A1 SEMICONDUCTOR WAFER PROTECTIVE FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2016-05-12
Information query
IPC分类: