- 专利标题： PEALD of films comprising silicon nitride
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申请号： US14211024申请日： 2014-03-14
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公开(公告)号： US09984868B2公开(公告)日： 2018-05-29
- 发明人: Victor Nguyen , Woong Jae Lee , Mihaela Balseanu , Li-Qun Xia , Derek R. Witty
- 申请人： Victor Nguyen , Woong Jae Lee , Mihaela Balseanu , Li-Qun Xia , Derek R. Witty
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Servilla Whitney LLC
- 主分类号： H01L21/469
- IPC分类号： H01L21/469 ; H01L21/02 ; C23C16/04 ; C23C16/34 ; C23C16/455 ; C23C16/56
摘要：
Provided are methods of for deposition of SiN films via PEALD processes. Certain methods pertain to exposing a substrate surface to a silicon precursor to provide a silicon precursor at the substrate surface; purging excess silicon precursor; exposing the substrate surface to an ionized reducing agent; and purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C.
公开/授权文献
- US20140273529A1 PEALD of Films Comprising Silicon Nitride 公开/授权日：2014-09-18
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