发明授权
- 专利标题: Metal resistors having nitridized metal surface layers with different nitrogen content
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申请号: US15132796申请日: 2016-04-19
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公开(公告)号: US09985088B2公开(公告)日: 2018-05-29
- 发明人: Daniel C. Edelstein , Chih-Chao Yang
- 申请人: International Business Machines Corporation
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 Steven J. Meyers
- 主分类号: H01L49/02
- IPC分类号: H01L49/02 ; H01L27/01 ; H01L21/66 ; H01L21/02 ; H01L21/62 ; H01L23/522 ; H01L21/768
摘要:
A semiconductor structure containing at least two metal resistor structures having different amounts of nitrogen on the resistor surface is provided. The resulted resistances (and hence resisitivty) of the two metal resistors can be either the same or different. The semiconductor structure may include a first metal resistor structure located on a portion of a dielectric-containing substrate. The first metal resistor structure includes, from bottom to top, a first metal layer portion and a first nitridized metal surface layer having a first nitrogen content. The semiconductor structure further includes a second metal resistor structure located on a second portion of the dielectric-containing substrate and spaced apart from the first metal resistor structure. The second metal resistor structure includes, from bottom to top, a second metal layer portion and a second nitridized metal surface layer having a second nitrogen content that differs from the first nitrogen content.