- 专利标题: High-frequency semiconductor amplifier
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申请号: US15007945申请日: 2016-01-27
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公开(公告)号: US09985584B2公开(公告)日: 2018-05-29
- 发明人: Kazutaka Takagi , Yukio Takahashi
- 申请人: Kabushiki Kaisha Toshiba
- 申请人地址: JP Minato-ku
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Minato-ku
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2015-013501 20150127
- 主分类号: H01P5/02
- IPC分类号: H01P5/02 ; H03F1/02 ; H03F1/56 ; H03F3/217 ; H03F3/19 ; H01L23/66 ; H03F3/60 ; H01P1/24 ; H01P1/28
摘要:
According to one embodiment, a high-frequency semiconductor amplifier includes an input terminal, an input matching circuit, a high-frequency semiconductor amplifying element, an output matching circuit and an output terminal. The input terminal is inputted with a fundamental signal. The fundamental signal has a first frequency band and a first center frequency in the first frequency band. The input matching circuit includes an input end and an output end. The input end of the input matching circuit is connected to the input terminal. The high-frequency semiconductor amplifying element includes an input end and an output end. The input end of the high-frequency semiconductor amplifying element is connected to the output end of the input matching circuit. The high-frequency semiconductor amplifying element is configured to amplify the fundamental signal.
公开/授权文献
- US20160218676A1 HIGH-FREQUENCY SEMICONDUCTOR AMPLIFIER 公开/授权日:2016-07-28
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