- 专利标题: High gain RF power amplifier with negative capacitor
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申请号: US15153605申请日: 2016-05-12
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公开(公告)号: US09985592B2公开(公告)日: 2018-05-29
- 发明人: Oleksandr Gorbachov , Lisette L. Zhang , Lothar Musiol
- 申请人: SKYWORKS SOLUTIONS, INC.
- 申请人地址: US MA Woburn
- 专利权人: Skyworks Solutions, Inc.
- 当前专利权人: Skyworks Solutions, Inc.
- 当前专利权人地址: US MA Woburn
- 代理机构: Stetina Brunda Garred & Brucker
- 主分类号: H03G3/12
- IPC分类号: H03G3/12 ; H03F3/21 ; H03F1/56 ; H03F3/193 ; H03F3/195 ; H03F3/45 ; H03H11/48 ; H03F3/191 ; H03F1/34
摘要:
A radio frequency (RF) power amplifier circuit includes an input and an output. A power amplifier transistor has a first terminal connected to the input, a second terminal connected to the output, and a third terminal defined by a degeneration inductance. A first capacitor is connected to the third terminal of the power amplifier transistor, along with a negative capacitance circuit connected in series with the first capacitor. The negative capacitance and the first capacitor define a series resonance at a predefined operating frequency band, which shunts the degeneration inductance of the third terminal.
公开/授权文献
- US20160336907A1 HIGH GAIN RF POWER AMPLIFIER WITH NEGATIVE CAPACITOR 公开/授权日:2016-11-17
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