- 专利标题： Semiconductor devices including gate insulation layers on channel materials and methods of forming the same
-
申请号： US15375387申请日： 2016-12-12
-
公开(公告)号： US09997537B2公开(公告)日： 2018-06-12
- 发明人: Jung-Hwan Lee , Jee-Yong Kim , Dae-Seok Byeon
- 申请人： Jung-Hwan Lee , Jee-Yong Kim , Dae-Seok Byeon
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel, P.A.
- 优先权： KR10-2015-0032988 20150310; KR10-2015-0066841 20150513
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L29/66 ; H01L29/423 ; H01L21/28
摘要：
Semiconductor devices are provided. A semiconductor device includes a stack of alternating insulation layers and gate electrodes. The semiconductor device includes a channel material in a channel recess in the stack. The semiconductor device includes a charge storage structure on the channel material, in the channel recess. Moreover, the semiconductor device includes a gate insulation layer on the channel material. The gate insulation layer undercuts a portion of the channel material. Related methods of forming semiconductor devices are also provided.