A resistive memory device includes a bottom electrode and a top electrode sandwiching a switching layer. The device also includes a field enhancement (FE) feature that extends from the bottom electrode either into the switching layer or is covered by switching layer and that is to enhance an electric field generated by the two electrodes to thereby confine a switching area of the device at the FE feature. The device further includes a planar interlayer dielectric surrounding the device, for supporting the top electrode. A method of making a resistive memory device, employing in-situ vacuum deposition of all layers, is also provided.