依法登记的发明
USH843H High power RF generation with optically activated bulk GaAs devices
失效
具有光学激活的大容量GaAs器件的高功率RF产生
- 专利标题： High power RF generation with optically activated bulk GaAs devices
- 专利标题（中）： 具有光学激活的大容量GaAs器件的高功率RF产生
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申请号： US374105申请日： 1989-05-26
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公开(公告)号： USH843H公开(公告)日： 1990-11-06
- 发明人: Anderson H. Kim , Maurice Weiner , Lawrence J. Bovino , Robert J. Youmans
- 申请人： Anderson H. Kim , Maurice Weiner , Lawrence J. Bovino , Robert J. Youmans
- 申请人地址： DC Washington
- 专利权人： The United States of America as represented by the Secretary of the Army
- 当前专利权人： The United States of America as represented by the Secretary of the Army
- 当前专利权人地址： DC Washington
- 主分类号： G02B6/42
- IPC分类号： G02B6/42 ; H03K3/57 ; H03K17/78
摘要：
Utilizing sections of charged transmission line cables and optically-actied semiconductor switches, the direct generation of high power RF is demonstrated.
公开/授权文献
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