再颁专利
- 专利标题： Method of fabricating a double heterostructure injection laser utilizing a stripe-shaped region
- 专利标题（中）： 利用条形区域制造双异质结构注入激光的方法
-
申请号： US696394申请日： 1976-06-15
-
公开(公告)号： USRE29395E公开(公告)日： 1977-09-13
- 发明人: Hiroo Yonezu
- 申请人： Hiroo Yonezu
- 申请人地址： JA Tokyo
- 专利权人： Nippon Electric Company, Limited
- 当前专利权人： Nippon Electric Company, Limited
- 当前专利权人地址： JA Tokyo
- 优先权： JA46-57665 19710730
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01S5/20
摘要：
A semiconductor laser device includes a narrow elongated semiconductor region of the same conductivity type as another semiconductor region lying in the vicinity of the active region of the laser device. The elongated region extends in depth from the surface of the device to the vicinity of the active region. A surface semiconductor layer of an opposite conductivity type covers the entire surface of the device except for the elongated region.
公开/授权文献
- US5842968A Soft penile clamp device 公开/授权日：1998-12-01
信息查询
IPC分类:
