再颁专利
USRE35041E Inductance and capacitance charge pump circuit for driving power MOS
transistor bridges
失效
用于驱动功率MOS晶体管桥的电感和电容电荷泵电路
- 专利标题: Inductance and capacitance charge pump circuit for driving power MOS transistor bridges
- 专利标题(中): 用于驱动功率MOS晶体管桥的电感和电容电荷泵电路
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申请号: US990630申请日: 1992-12-14
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公开(公告)号: USRE35041E公开(公告)日: 1995-09-26
- 发明人: Domenico Rossi , Claudio Diazzi
- 申请人: Domenico Rossi , Claudio Diazzi
- 申请人地址: ITX Agrate Brianza
- 专利权人: SGS-Thomson Microelectronics, S.r.l.
- 当前专利权人: SGS-Thomson Microelectronics, S.r.l.
- 当前专利权人地址: ITX Agrate Brianza
- 优先权: ITX21450/88 19880722
- 主分类号: H02M3/07
- IPC分类号: H02M3/07 ; H02M3/155 ; H02M3/156 ; H02M7/538 ; H03K17/06 ; H03K17/082 ; H03K17/60 ; H03K3/01 ; H03L5/00
摘要:
The circuit comprises a tank capacitance and a charge circuit supplied with the same voltage as the bridge and comprising an inductance and a control transistor. There is also provided a control circuit, which comprises an oscillator controlling the periodic switching of control transistor and a comparator which controls the momentary clamping of control transistor in the condition wherein the charge circuit is interrupted when the difference between the voltage across capacitance and the power supply voltage exceeds a present maximum value and the unclamping of the same transistor when such difference falls below a preset minimum value. A further comparator similarly clamps control transistor if there is an excess current in the transistor itself.
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