再颁专利
- 专利标题： Polysilicon encapsulated localized oxidation of silicon
- 专利标题（中）： 多晶硅封装了硅的局部氧化
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申请号： US245131申请日： 1994-05-17
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公开(公告)号： USRE35294E公开(公告)日： 1996-07-09
- 发明人: Barbara Vasquez , Michael P. Masquelier , Scott S. Roth , Wayne J. Ray
- 申请人： Barbara Vasquez , Michael P. Masquelier , Scott S. Roth , Wayne J. Ray
- 申请人地址： IL Schaumburg
- 专利权人： Motorola, Inc.
- 当前专利权人： Motorola, Inc.
- 当前专利权人地址： IL Schaumburg
- 主分类号： H01L21/32
- IPC分类号： H01L21/32 ; H01L21/762 ; H01L21/76
摘要：
A reduction in defects and lateral encroachment is obtained by .[.utilizing a high pressure oxidation in conjunction with.]. an oxidizable layer conformally deposited over an oxidation mask. .[.The.]. .Iadd.In one embodiment, the .Iaddend.use of high pressure oxidation provides for the formation of LOCOS oxide without the formation of defects. Any native oxide present on the substrate surface is removed by using a ramped temperature deposition process to form oxidizable layer and/or a high temperature anneal is performed to remove the native oxide at the substrate surface. In this embodiment, any oxide which can act as a pipe for oxygen diffusion is removed. Therefore, nominal or no lateral encroachment is exhibited..Iadd.Alternately, lateral encroachment can be controlled by intentionally growing an oxide layer on the substrate surface. .Iaddend.
公开/授权文献
- US4893973A Expansion dowel with axially extending projections 公开/授权日：1990-01-16
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