再颁专利
- 专利标题： Thermoelectric semiconductor having a porous structure deaerated in a vacuum and thermoelectric panel using p-type and n-type thermoelectric semiconductors
- 专利标题（中）： 使用p型和n型热电半导体的真空和热电板中具有多孔结构脱气的热电半导体
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申请号： US330565申请日： 1994-10-28
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公开(公告)号： USRE35441E公开(公告)日： 1997-02-04
- 发明人: Youichirou Yokotani , Kouichi Kugimiya , Hamae Ando
- 申请人： Youichirou Yokotani , Kouichi Kugimiya , Hamae Ando
- 申请人地址： JPX Osaka
- 专利权人： Matsushita Electrical Industrial Co., Ltd.
- 当前专利权人： Matsushita Electrical Industrial Co., Ltd.
- 当前专利权人地址： JPX Osaka
- 优先权： JPX2-103030 19900420; JPX2-335911 19901129; JPX2-335925 19901129; JPX2-335926 19901129
- 主分类号： H01L35/12
- IPC分类号： H01L35/12 ; H01L35/14 ; H01L35/16 ; H01L35/32 ; H01L23/56
摘要：
A thermoelectric semiconductor device having a porous structure and an air-tight sealing structure maintaining it in a deaerated state is disclosed. A refrigeration panel comprising a plurality of p-type and n-type semiconductor elements each having a structure mentioned above, in which the elements are arranged alternatively and electrically connected in series is also disclosed.
公开/授权文献
- US6042072A Structure ceiling fan mount 公开/授权日：2000-03-28