A neutron individual dose meter and a neutron dose rate meter, both capable of implementing the effective dose equivalent response. The neutron individual dose meter is capable of being accomplished by providing a composite layer made up of a converter such as boron, and a proton radiator, on the surface of a semiconductor neutron detection element. The neutron dose rate meter is capable of being accomplished through such a structure as to surround a neutron detector with a neutron moderator and a thermal neutron absorber which has openings. Thus, a neutron individual dose meter and a neutron dose rate meter, both capable of implementing the effective dose equivalent response and measurement at lower operating voltage have been provided. Further, these meters are capable of being implemented by utilizing a single semiconductor detection element, respectively.