再颁专利
- 专利标题: Manufacturing method for magnetoresistive head having an antiferromagnetic layer of PTMN
- 专利标题(中): 具有PTMN的反铁磁层的磁阻头的制造方法
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申请号: US09482696申请日: 2000-01-18
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公开(公告)号: USRE37819E1公开(公告)日: 2002-08-13
- 发明人: Masamichi Saito , Toshinori Watanabe , Toshihiro Kuriyama
- 申请人: Masamichi Saito , Toshinori Watanabe , Toshihiro Kuriyama
- 优先权: JP7-240075 19950919; JP7-240076 19950919
- 主分类号: G11B539
- IPC分类号: G11B539
摘要:
The present invention provides a magnetoresistive head wherein: a magnetoresistive film is created in a read-track region at the center of the magnetoresistive head; an antiferromagnetic film and a ferromagnetic film experiencing an exchange coupling magnetic field due to direct contact with the antiferromagnetic film are created on each end of the magnetoresistive film outside the read-track region in such a way that the ferromagnetic film is located beside the magnetoresistive film; a nonmagnetic intermediate film is created between the magnetoresistive film and the ferromagnetic film for preventing ferromagnetic coupling from being developed on a contact boundary surface between the magnetoresistive film and the ferromagnetic film and for making crystal orientations of the antiferromagnetic film and the ferromagnetic film uniform; and bias magnetization is applied to the magnetoresistive film by exchange coupling between the antiferromagnetic film and the ferromagnetic film.
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