再颁专利
- 专利标题: Vacuum processing operating method with wafers, substrates and/or semiconductors
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申请号: US10066747申请日: 2002-09-24
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公开(公告)号: USRE39775E1公开(公告)日: 2007-08-21
- 发明人: Shigekazu Kato , Kouji Nishihata , Tsuenhiko Tsubone , Atsushi Itou
- 申请人: Shigekazu Kato , Kouji Nishihata , Tsuenhiko Tsubone , Atsushi Itou
- 申请人地址: JP Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout and Kraus, LLP.
- 优先权: JP02-225321 19900829
- 主分类号: F26B5/04
- IPC分类号: F26B5/04
摘要:
This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dry-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used for dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.
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