再颁专利
- 专利标题： Semiconductor device and method of fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
-
申请号： US10829476申请日： 2004-04-22
-
公开(公告)号： USRE41625E1公开(公告)日： 2010-09-07
- 发明人: Yoshihisa Nagano , Yasuhiro Uemoto
- 申请人： Yoshihisa Nagano , Yasuhiro Uemoto
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： Nixon Peabody LLP
- 代理商 Jeffrey L. Costellia
- 优先权： JP11-146103 19990526
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
A protective insulating film is deposited over first and second field-effect transistors formed on a semiconductor substrate. A capacitor composed of a capacitor lower electrode, a capacitor insulating film composed of an insulating metal oxide film, and a capacitor upper electrode is formed on the protective insulating film. A first contact plug formed in the protective insulating film provides a direct connection between the capacitor lower electrode and an impurity diffusion layer of the first field-effect transistor. A second contact plug formed in the protective insulating film provides a direct connection between the capacitor upper electrode and an impurity diffusion layer of the second field-effect transistor.
信息查询
IPC分类:
