再颁专利
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12202037申请日： 2008-08-29
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公开(公告)号： USRE43320E1公开(公告)日： 2012-04-24
- 发明人: Masaki Yamada , Hideki Shibata
- 申请人： Masaki Yamada , Hideki Shibata
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2003-032506 20030210
- 主分类号： H01L29/40
- IPC分类号： H01L29/40 ; H01L23/48 ; H01L23/52
摘要：
There is disclosed a semiconductor device comprising a first metal wiring buried in a first wiring groove formed, via a first barrier metal, in a first insulating layer formed on a semiconductor substrate, a second insulating layer formed on the first metal wiring, a via plug formed of a metal buried, via a second barrier metal, in a via hole formed in the second insulating layer, a third insulating layer formed on the second insulating layer in which the via plug is buried, and a second metal wiring buried in a second wiring groove formed in the third insulating layer via a third barrier metal having a layer thickness of layer quality different from that of the second barrier metal.
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