再颁专利
USRE44482E1 CMOS active image sensor with common pixel transistors and binning capability
有权
CMOS有源图像传感器,具有公共像素晶体管和合并能力
- 专利标题: CMOS active image sensor with common pixel transistors and binning capability
- 专利标题(中): CMOS有源图像传感器,具有公共像素晶体管和合并能力
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申请号: US13343843申请日: 2012-01-05
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公开(公告)号: USRE44482E1公开(公告)日: 2013-09-10
- 发明人: Vladimir Berezin , Alexander I. Krymski , Eric R. Fossum
- 申请人: Vladimir Berezin , Alexander I. Krymski , Eric R. Fossum
- 申请人地址: US NJ Jersey City
- 专利权人: Round Rock Research, LLC
- 当前专利权人: Round Rock Research, LLC
- 当前专利权人地址: US NJ Jersey City
- 代理机构: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- 主分类号: H01L31/062
- IPC分类号: H01L31/062 ; H01L31/101
摘要:
A lock in pinned photodiode photodetector includes a plurality of output ports which are sequentially enabled. Each time when the output port is enabled is considered to be a different bin of time. A specified pattern is sent, and the output bins are investigated to look for that pattern. The time when the pattern is received indicates the time of flight A CMOS active pixel image sensor includes a plurality of pinned photodiode photodetectors that use a common output transistor. In one configuration, the charge from two or more pinned photodiodes may be binned together and applied to the gate of an output transistor.
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