发明申请
- 专利标题： CMOS INTEGRATED CIRCUIT
- 专利标题（中）： CMOS集成电路
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申请号： PCT/US1983000583申请日： 1983-04-21
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公开(公告)号： WO1983004149A1公开(公告)日： 1983-11-24
- 发明人: WESTERN ELECTRIC COMPANY, INC. , LAW, Hung-Fai, Stephen , LEE, Charles, Meng-Yuan
- 申请人： WESTERN ELECTRIC COMPANY, INC.
- 专利权人： WESTERN ELECTRIC COMPANY, INC.
- 当前专利权人： WESTERN ELECTRIC COMPANY, INC.
- 优先权： US376,547 19820510
- 主分类号： H03K19/003
- IPC分类号： H03K19/003
摘要：
An improvement in the basic domino circuit to reduce sensivity to leakage and noise. It basically involves addition of an unclocked small beta p-type pull-up transistor (17) in shunt with the clocked large beta p-type pull-up transistor (13) between the high power terminal and the output node (14) of each stage. This added transistor is operated with its gate so connected that it provides pull-up current to the output node during the evaluation phase when the large beta transistor is turned off.
